MV2N4392UB

Overview

The MV2N4392UB is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes Silicon technology and is housed in a TO-18-3 through-hole package. Key electrical parameters include a Drain-Source Breakdown Voltage (Vds) of 40 V, a Gate-Source Breakdown Voltage (Vgs) of -40 V, and a maximum power dissipation (Pd) of 360 mW. The device supports a continuous drain current of -100 pA and operates within a temperature range of -65°C to +175°C.

Feature Summary

• Provides high-temperature operational capability suitable for demanding environments.

Applications

• High-temperature analog circuit design

Procurement Notes

Verify the specific ordering suffix and package configuration against official Microchip documentation before procurement. Confirm that the TO-18-3 through-hole format aligns with the target PCB layout requirements. Ensure that the N-channel JFET specifications meet the precise voltage and current constraints of the intended application circuit.

Selection Notes

Select this component when a silicon-based N-channel JFET with a 40 V breakdown rating is required. The wide operating temperature range makes it appropriate for industrial or aerospace applications where standard commercial-grade transistors may fail. Verify that the through-hole mounting style is compatible with the assembly process.

Part Context

This part belongs to the Microchip Technology JFET product line, categorized under discrete transistors. It serves as a specialized semiconductor device designed for linear amplification and switching applications requiring stable performance across extreme thermal conditions.

Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Cross-reference pinouts and electrical ratings carefully if considering alternative manufacturers' parts.