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The MV2N4393UB/TR is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It is housed in a TO-18-3 through-hole package and configured as a single device. The component supports a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. It features a maximum power dissipation of 360 mW and operates within a temperature range of -65°C to +175°C.
Verify the specific suffix 'TR' indicates tape and reel packaging when sourcing this component. Confirm RoHS3 compliance status directly with the manufacturer or authorized distributors, as regulatory requirements may vary by region and production batch. Ensure the procurement channel provides valid traceability documentation for aerospace or defense-grade specifications if required by the application design.
Select this JFET when a high-voltage, low-noise silicon transistor is required for analog front-end designs. The TO-18-3 package facilitates easy integration into legacy or high-reliability through-hole PCB layouts. Consider the 40V breakdown rating and wide thermal operating range when designing for harsh industrial or military environments where standard commercial components may fail.
This component belongs to Microchip's discrete semiconductor portfolio, specifically within the JFET category. It serves as a specialized active device for analog circuit designers needing high linearity and low noise characteristics. The product line supports various industrial, automotive, and communications markets requiring durable electronic solutions.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps before considering alternative JFETs from other manufacturers.
The maximum operating temperature is +175°C.
No, it is designed for through-hole installation using a TO-18-3 package.