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The MV2N4856UB/TR is a Silicon N-Channel Junction Field Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes surface-mount technology in an SMD-3 package configuration. The device supports a drain-source breakdown voltage of 40V and a gate-source breakdown voltage of -40V. Continuous drain current capability reaches 175mA at 15V, with a maximum power dissipation of 360mW. Operating temperature range spans from -65°C to +200°C junction temperature.
Verify the exact datasheet specifications directly with Microchip Technology or authorized distributors before integration. Confirm that the SMD-3 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies accommodate the specified power dissipation limits within the operational temperature range. Validate component authenticity through official supply channels.
Select this component when a surface-mount N-channel JFET with high thermal tolerance is required. The 40V breakdown rating suits low-voltage signal processing tasks. Consider the SMD-3 form factor for automated assembly processes. Compare against through-hole alternatives if higher current handling or different mounting styles are necessary for the specific application constraints.
This part belongs to the Microchip JFET product line, specifically designed for general-purpose switching and amplification roles. It represents the surface-mount variant of the traditional TO-18 packaged devices, offering compatibility with modern SMT manufacturing techniques while maintaining similar electrical characteristics to its legacy counterparts.