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The MV2N4857UB/TR is a single N-channel Silicon JFET manufactured by Microchip Technology. It utilizes an SMD/SMT installation style within an LCC-3 package. The device features a Drain-Source breakdown voltage of 40 V and a Gate-Source breakdown voltage of 40 V. Continuous drain current is rated at 360 mA, with a maximum on-resistance of 40 Ohms. Power dissipation reaches 1.8 W, supporting operation between -65°C and +200°C.
Verify the specific suffix against official Microchip documentation to confirm radiation hardness levels and quality certification standards. Ensure the LCC-3 footprint matches the target PCB layout. Confirm that the 40V rating aligns with circuit requirements. Validate RoHS compliance status through current datasheets before finalizing procurement specifications.
Select this component when high-temperature stability and radiation tolerance are required. Compare the 40V breakdown and 360mA current limits against circuit demands. Consider the LCC-3 package constraints for thermal management. Evaluate alternatives only if standard commercial grade suffices.
This part belongs to the 2N4856-2N4861 family of N-channel JFETs. The MV prefix typically denotes JANTXV qualification levels for enhanced reliability. These devices serve as direct replacements for MIL-PRF-19500/385 equivalents in ruggedized applications requiring robust semiconductor performance.
Cross-reference with MX2N4857UB/TR or MQ2N4857UB/TR based on required radiation hardness levels. Verify pinout compatibility with existing LCC-3 footprints. Ensure thermal characteristics match system constraints.