MV2N4858

MV2N4858

$47.60
  • Description:JFET N-CH 40V TO18
  • Series:-

SKU:4e3a87a98021 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 40V TO18
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):40 V
  • Current - Drain (Idss) @ Vds (Vgs=0):80 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:4 V @ 0.5 nA
  • Input Capacitance (Ciss) (Max) @ Vds:18pF @ 10V
  • Resistance - RDS(On):60 Ohms
  • Power - Max:360 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)
  • Grade:Military
  • Qualification:MIL-PRF-19500/385

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MV2N4858

Overview

The MV2N4858 is a Silicon N-Channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes the TO-18-3 metal can package for through-hole mounting. The device is designed for general-purpose amplification and switching applications, offering stable performance in analog circuits.

Feature Summary

  • Utilizes Silicon technology for reliable semiconductor performance
  • Provides N-Channel JFET functionality for signal processing
  • Features a hermetically sealed TO-18-3 metal can package

Applications

  • General-purpose analog amplification stages
  • Electronic switching circuits requiring low leakage
  • Impedance matching networks in RF applications

Procurement Notes

Verify the specific datasheet revision and manufacturing lot details upon order confirmation. Ensure that the TO-18-3 package dimensions align with the target PCB footprint or chassis mounting requirements. Confirm RoHS compliance status as indicated in the official product documentation before finalizing procurement specifications.

Selection Notes

Select this component when a ruggedized, hermetically sealed JFET is required for harsh environments. The TO-18-3 package offers superior thermal dissipation compared to plastic packages. Verify that the gate-source breakdown voltage and drain current ratings meet the specific circuit design constraints for the intended application.

Part Context

This part belongs to Microchip's discrete semiconductor portfolio, specifically within the JFET category. It serves as a replacement for legacy silicon JFETs in industrial and military-grade equipment where long-term availability and radiation hardness are critical design factors.

MV2N4858MV2N4858
$47.60
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