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The MV2N4858UB/TR is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a single configuration housed in an SMD-3 surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of -30 V, and a continuous drain current of 175 mA. The device exhibits a maximum on-resistance of 60 Ohms and supports a power dissipation of 1.8 W. It operates within a temperature range of -65°C to +200°C.
Verify the specific suffix against official Microchip documentation to confirm pinout compatibility and electrical tolerances. Ensure the ordering part number matches the required package style and lead frame finish. Cross-reference the manufacturer's latest datasheet revision to validate compliance with RoHS directives and material declarations before finalizing procurement orders.
Select this component when a surface-mount JFET capable of withstanding extreme ambient temperatures is required. The 30 V breakdown rating suits moderate voltage applications. Verify that the 175 mA current limit meets circuit demands. Consider the SMD-3 footprint constraints during PCB layout design to ensure adequate thermal management for the 1.8 W dissipation capability.
This device belongs to Microchip's portfolio of high-reliability discrete semiconductors. It serves as a solid-state switching or amplifying element within complex electronic assemblies. The product line emphasizes durability and consistent performance under harsh environmental conditions, catering to industries where standard commercial components may fail due to thermal stress.
Consult Microchip's official substitution guide for verified equivalents. Generic replacements may not match the specified +200°C operating limit or the exact SMD-3 mechanical dimensions. Validate all critical parameters against the original datasheet before implementing any alternative source.