MV2N4859

MV2N4859

$47.60
  • Description:JFET N-CH 30V TO18
  • Series:-

SKU:8643a6e07bd0 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 30V TO18
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):175 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:10 V @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds:18pF @ 10V
  • Resistance - RDS(On):25 Ohms
  • Power - Max:360 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)
  • Grade:Military
  • Qualification:MIL-PRF-19500/385

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MV2N4859

Overview

The MV2N4859 is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 metal can package for through-hole mounting. The device features a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. At zero gate-source voltage, the drain current is specified at 30 mA. The continuous drain current rating is 100 pA, with an on-resistance of 30 Ohms. Power dissipation is rated at 360 mW, supporting an operating temperature range from -65°C to +175°C.

Feature Summary

  • High-temperature operation capability up to +175°C
  • Metal can construction for robust environmental sealing
  • Defined pinch-off characteristics for analog signal control

Applications

  • High-temperature analog switching circuits
  • Precision current source regulation
  • Harsh environment sensor interface stages

Procurement Notes

Verify component authenticity against Microchip Technology official documentation prior to integration. Confirm that the specific lot markings align with the manufacturer's quality standards. Ensure procurement channels are authorized to prevent counterfeit components. Review the latest datasheet revision for any updates to electrical limits or handling instructions before finalizing design specifications.

Selection Notes

Select this component when high-temperature stability and precise analog control are required in harsh environments. The TO-18-3 package provides superior thermal and mechanical performance compared to plastic packages. Consider the specific drain current requirements as the device operates with defined pinch-off characteristics suitable for linear applications rather than digital switching.

Part Context

This JFET belongs to Microchip's specialized discrete transistor portfolio designed for demanding industrial and aerospace applications. The TO-18-3 hermetic package distinguishes it from standard commercial-grade transistors, offering enhanced reliability under extreme thermal stress. It serves as a critical active element in precision analog front-end designs where long-term stability is paramount.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter tolerances if considering alternative manufacturers. Ensure replacement devices meet the same -65°C to +175°C operating temperature range and TO-18-3 form factor requirements.

MV2N4859MV2N4859
$47.60
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