MV2N4859UB/TR

$67.00

Description：JFET
Series：*

SKU:38debd16955e Category: JFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：JFET
Series：*
Mfr：Microchip Technology
Package：Tape & Reel (TR)
FET Type：-
Voltage - Breakdown (V(BR)GSS)：-
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：-
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：-
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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MV2N4859UB/TR

Overview

The MV2N4859UB/TR is a Silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a single configuration housed in an SMD/SMT package. The device supports a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. Key electrical characteristics include a zero-gate-voltage drain-source current of 80 mA and a drain-source on-resistance of 60 Ohms. The component handles a power dissipation of 1.8 W and operates within a temperature range of -65°C to +200°C.

Feature Summary

Utilizes Silicon technology for robust performance in high-temperature environments.
Designed for surface-mount installation to facilitate automated assembly processes.
Provides high thermal stability with an extended maximum operating temperature rating.

Applications

High-frequency signal amplification circuits
Low-noise analog switching applications
Precision variable resistance control systems

Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging when placing orders. Confirm that the part number matches the exact pinout and electrical specifications required for the target circuit design. Ensure compatibility with surface-mount assembly equipment. Cross-reference the manufacturer's latest datasheet for any recent product change notifications or environmental compliance updates before finalizing procurement.

Selection Notes

Select this component when a surface-mount JFET with high thermal endurance is required. The 1.8 W power dissipation capability allows for efficient operation in compact designs without excessive heat sinking. The 60 Ohm on-resistance suits applications requiring moderate conduction levels. Verify that the 30 V voltage ratings align with the system's maximum operating limits to ensure reliable long-term performance under varying load conditions.

Part Context

This JFET belongs to Microchip's discrete transistor portfolio, specifically engineered for analog signal processing tasks. It serves as a critical active element in circuits demanding low noise and stable gain characteristics. The transition from through-hole to surface-mount packaging reflects industry trends toward miniaturization and higher density PCB layouts while maintaining the reliability standards associated with the brand's silicon components.

Replacement Considerations

Consult official substitution guides for compatible JFETs with matching 30 V ratings and similar on-resistance values. Verify pinout compatibility if replacing in existing footprints. Ensure alternative components meet the same -65°C to +200°C operating temperature range for equivalent thermal performance.