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The MV2N4860UB/TR is a Silicon JFET manufactured by Microchip Technology, designed for through-hole mounting in TO-18-3 packages. It features a single configuration with a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. The device supports a maximum power dissipation of 1.8 W and operates within a temperature range of -65°C to +200°C. Key electrical characteristics include an on-state drain current of 80 mA at Vgs=0 and an on-resistance of 60 Ohms.
Verify the specific ordering suffix UB/TR against official Microchip documentation to confirm tape and reel packaging requirements. Ensure that the TO-18-3 through-hole package aligns with your PCB layout constraints. Cross-reference the datasheet for absolute maximum ratings to prevent device damage during procurement and integration phases.
Select this component when high-temperature stability and specific JFET characteristics are required. The 30V breakdown rating suits low-voltage applications. Consider the TO-18-3 package for legacy or specialized through-hole designs. Evaluate the 60 Ohm on-resistance against circuit impedance requirements before finalizing the design choice.
This part belongs to the Microchip JFET product line, specifically utilizing Silicon technology. It serves as a discrete transistor solution for analog applications. The MV2N4860 series provides standardized performance metrics for engineers designing reliable semiconductor circuits under varying thermal conditions.
Consult official substitution guides for compatible JFETs with matching 30V ratings and TO-18-3 packages. Verify pinout compatibility and thermal specifications before replacing the original component.