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The MV2N5114 is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 metal can package designed for through-hole mounting. The device features a single transistor configuration with a maximum drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. At zero gate-source voltage, the drain current is specified at 30 mA, while the continuous drain current rating is 100 pA. The component supports a power dissipation of 360 mW and operates within a temperature range from -65°C to +175°C.
Verify the specific ordering suffix against official Microchip documentation to confirm package type and electrical tolerances. Ensure the procurement channel provides valid traceability records. Confirm that the received components match the specified TO-18-3 form factor and meet the required thermal operating limits before integration into final assemblies.
Select this component when a hermetic N-channel JFET with a 40 V breakdown rating is required. The TO-18-3 package offers superior environmental protection compared to plastic alternatives. Consider the 360 mW power dissipation limit and the -65°C to +175°C operating range to ensure compatibility with the target system's thermal management strategy and physical mounting constraints.
This device belongs to Microchip's discrete semiconductor portfolio, specifically within the JFET category. It serves as a specialized active component for analog design engineers requiring high reliability. The product line emphasizes long-term availability and consistent performance for industrial and aerospace-grade electronics where standard commercial parts may lack sufficient durability or specification margins.
Consult official Microchip substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers' JFETs to ensure functional compatibility without redesigning the surrounding circuitry.