MV2N5114

MV2N5114

$54.37
  • Description:JFET P-CH 30V TO18
  • Series:-

SKU:e21c38850217 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET P-CH 30V TO18
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):90 mA @ 18 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:10 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:25pF @ 15V
  • Resistance - RDS(On):75 Ohms
  • Power - Max:500 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)
  • Grade:Military
  • Qualification:MIL-PRF-19500

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MV2N5114

Overview

The MV2N5114 is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 metal can package designed for through-hole mounting. The device features a single transistor configuration with a maximum drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. At zero gate-source voltage, the drain current is specified at 30 mA, while the continuous drain current rating is 100 pA. The component supports a power dissipation of 360 mW and operates within a temperature range from -65°C to +175°C.

Feature Summary

  • Utilizes silicon technology for robust performance in demanding environments.
  • Features a hermetic TO-18-3 metal can package suitable for high-reliability applications.
  • Designed for through-hole installation to support traditional circuit board layouts.

Applications

  • High-frequency analog signal processing circuits
  • Low-noise amplifier stages requiring stable biasing
  • Precision electronic instrumentation front-ends

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm package type and electrical tolerances. Ensure the procurement channel provides valid traceability records. Confirm that the received components match the specified TO-18-3 form factor and meet the required thermal operating limits before integration into final assemblies.

Selection Notes

Select this component when a hermetic N-channel JFET with a 40 V breakdown rating is required. The TO-18-3 package offers superior environmental protection compared to plastic alternatives. Consider the 360 mW power dissipation limit and the -65°C to +175°C operating range to ensure compatibility with the target system's thermal management strategy and physical mounting constraints.

Part Context

This device belongs to Microchip's discrete semiconductor portfolio, specifically within the JFET category. It serves as a specialized active component for analog design engineers requiring high reliability. The product line emphasizes long-term availability and consistent performance for industrial and aerospace-grade electronics where standard commercial parts may lack sufficient durability or specification margins.

Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers' JFETs to ensure functional compatibility without redesigning the surrounding circuitry.

MV2N5114MV2N5114
$54.37
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