ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET P-CH 30V UB
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：30 mA @ 18 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：25pF @ 15V
- Resistance - RDS(On)：75 Ohms
- Power - Max：500 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：Military
- Qualification：MIL-PRF-19500
Download product information
Overview
The MV2N5114UB/TR is a P-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in an SMD/SMT UB-4 package. Key electrical characteristics include a drain-source breakdown voltage of -600 mV, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 4 V. The device specifies a zero-gate-voltage drain-source current of -25 mA and a drain-source on-resistance of 100 Ohms. Power dissipation is rated at 500 mW, with an operating temperature range from -65 C to +200 C.
Feature Summary
- P-channel JFET configuration for signal processing applications
- High thermal stability supporting operation up to +200 C
- Surface-mount UB-4 packaging for automated assembly
Applications
- Low-noise amplifier circuits
- Analog switching applications
- Impedance matching networks
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to confirm tape-and-reel packaging status. Ensure the requested quantity meets any minimum order requirements specified in the manufacturer's sales channels. Cross-reference the full part number with the latest datasheet revision to confirm pinout compatibility and electrical tolerances before finalizing procurement orders.
Selection Notes
Select this component when a P-channel JFET with low drain-source resistance and high thermal tolerance is required. The UB-4 surface-mount package facilitates integration into compact designs. Verify that the -600 mV breakdown voltage aligns with the circuit's operational limits. Consider the -25 mA zero-gate current specification for biasing requirements in analog signal paths.
Part Context
This device belongs to the Microchip 2N511x series of JFETs, designed for general-purpose analog applications. The MV prefix typically denotes a specific manufacturing variant or packaging option within the broader product line. These transistors are engineered for reliability in demanding electronic environments, offering consistent performance across wide temperature ranges.
Replacement Considerations
Consult official Microchip documentation for verified cross-reference part numbers. Generic equivalents may not match the specific UB-4 package dimensions or precise electrical parameters such as the 100 Ohm on-resistance.
