MV2N5114UB

Overview

The MV2N5114UB is a P-Channel Silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a low-profile ceramic surface mount UB-4 package and operates within a temperature range of -65°C to +200°C. Key electrical parameters include a drain-source breakdown voltage of -800 mV, a gate-source breakdown voltage of 30 V, and a zero-gate-voltage drain current of -60 mA. The device features a maximum power dissipation of 500 mW and an on-resistance of 100 Ohms.

Feature Summary

• Surface mount equivalent to JEDEC registered 2N5114 series
• Low-profile ceramic surface mount package
• Screening in reference to MIL-PRF-19500 available

Applications

• High-reliability applications requiring military screening
• Voltage regulation circuits
• Small signal field-effect transistor switching

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm if the component includes MIL-PRF-19500 screening or represents the commercial grade variant. Confirm RoHS compliance status, as it applies only to commercial versions. Ensure the UB-4 package type matches the design requirements for surface mount assembly.

Selection Notes

Select this component when a P-Channel JFET with a low drain-source breakdown voltage of -800 mV is required. The wide operating temperature range up to +200°C supports high-temperature environments. Consider the UB-4 package for space-constrained surface mount designs needing a ceramic construction.

Part Context

This part belongs to the 2N5114 through 2N5116 series of small signal JFETs. The 'MV' prefix typically denotes a military-grade version with specific screening standards compared to the standard commercial 2N5114UB. These devices are designed as surface mount equivalents for legacy through-hole transistors.

Replacement Considerations

• 2N5114UB
• MX2N5114