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The MV2N5115 is a P-Channel Silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It is designed for surface mount applications in the UB-4 package. Key electrical parameters include a drain-source breakdown voltage of -800 mV, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 6 V. The device exhibits a drain-source current of -60 mA at zero gate-source voltage and a drain-source on-resistance of 100 Ohms. Power dissipation is rated at 500 mW, with an operating temperature range from -65 C to +200 C.
Verify the specific part number suffix against official Microchip documentation to confirm package type and screening level. Datasheets may list equivalent commercial or military grades such as 2N5115UB or MQ2N5115. Confirm that the UB-4 surface mount variant matches the design requirements rather than through-hole alternatives. Ensure compliance with relevant environmental standards if RoHS exemption is required for the specific manufacturing lot.
Select this component when a low-voltage P-Channel JFET is required for surface mount designs. The -800 mV breakdown voltage indicates suitability for low-voltage signal switching or attenuation circuits. Compare the 100 Ohm on-resistance and 500 mW power dissipation against circuit load requirements. Consider the extended high-temperature capability up to +200 C for harsh environment applications where standard silicon limits are insufficient.
The MV2N5115 belongs to the 2N5114 through 2N5116 series of P-Channel JFETs. This family provides surface mount equivalents to traditional through-hole devices. The series is characterized by low-profile packaging and availability in military screening options. Microchip offers these transistors for applications requiring reliable small-signal field-effect transistor performance in compact form factors.
Public confirmed substitute part numbers: 2N5115UB, MQ2N5115.