MV2N5115UB/TR

Overview

The MV2N5115UB/TR is a P-Channel Silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes the UB-4 surface-mount package and operates within a temperature range of -65°C to +200°C. Key electrical specifications include a drain-source breakdown voltage of -800 mV, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 6 V. The device exhibits a zero-gate-voltage drain-source current of -60 mA and an on-resistance of 100 Ohms. Maximum power dissipation is rated at 500 mW.

Feature Summary

• Low-profile ceramic surface mount construction in the UB-4 package
• High maximum operating temperature capability up to +200°C
• Surface mount equivalent to JEDEC registered 2N5114 through 2N5116 series

Applications

• High-reliability applications requiring military screening per MIL-PRF-19500
• Voltage regulation circuits for higher and lower power requirements
• Small signal amplification using P-Channel JFET topology

Procurement Notes

Verify the specific suffix configuration against official Microchip documentation to ensure correct packaging and screening levels. Confirm that the UB-4 package dimensions align with PCB footprint requirements. Check for RoHS compliance status as commercial versions may differ from military equivalents. Validate the minimum order quantity and lead times directly with authorized distributors or the manufacturer prior to procurement planning.

Selection Notes

Select this component when a P-Channel JFET with low drain-source breakdown voltage and high thermal stability is required. The -800 mV Vds rating distinguishes it from standard higher-voltage variants. Ensure the circuit design accommodates the 100 Ohm on-resistance and -60 mA Idss characteristics. Consider the UB-4 package for space-constrained surface-mount designs needing robust thermal performance up to 200°C.

Part Context

This part belongs to the 2N5114 through 2N5116 series of small-signal field-effect transistors. These devices are designed as surface-mount equivalents to traditional through-hole counterparts. The series offers options for various breakdown voltages and currents, serving as fundamental discrete semiconductor components for analog signal processing and switching applications in demanding environments.

Replacement Considerations

Public confirmed substitute part numbers: 2N5115UB.