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Product Detailed Parameters
- Description：JFET P-CH 30V UB
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：15 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：25pF @ 15V
- Resistance - RDS(On)：100 Ohms
- Power - Max：500 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：Military
- Qualification：MIL-PRF-19500
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Overview
The MV2N5115UB is a P-Channel Silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes the UB-4 low-profile ceramic surface mount package, designed for high-reliability applications with screening in reference to MIL-PRF-19500 available. Key electrical parameters include a drain-source breakdown voltage of -800 mV and a gate-source breakdown voltage of 30 V. The device operates with a gate-source cutoff voltage of 6 V and exhibits a drain-source on-resistance of 100 Ohms at zero gate-source voltage. It supports a maximum power dissipation of 500 mW and functions within a temperature range of -65°C to +200°C.
Feature Summary
- Surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series
- Low-profile ceramic surface mount package construction
- Screening in reference to MIL-PRF-19500 available for high reliability
Applications
- High-reliability military applications
- Voltage regulation circuits
- Small signal amplification
Procurement Notes
Verify the specific ordering suffix and screening level required for your application, as military screening options are available but may differ from commercial versions. Confirm RoHS compliance status if environmental regulations apply, noting that compliant versions are typically commercial grade only. Ensure the UB-4 package footprint matches your PCB design constraints before finalizing procurement.
Selection Notes
Select this component when a P-Channel JFET in a low-profile ceramic SMD package is required for rugged environments. Consider the -800 mV drain-source breakdown voltage limit carefully against circuit operating conditions. The availability of MIL-PRF-19500 screening makes it suitable for aerospace or defense projects where enhanced reliability is mandated over standard commercial specifications.
Part Context
This part belongs to the 2N5114 through 2N5116 series of small signal field-effect transistors. It serves as the surface mount counterpart to the leaded TO-18 variants, such as the MX2N5115. The series is characterized by silicon junction technology and is intended for applications requiring robust performance in compact form factors.
Replacement Considerations
The MX2N5115 is a verified leaded TO-18 replacement option within the same series. For surface mount needs, verify compatibility with other members of the 2N5114-2N5116 family, ensuring pinout and package dimensions align with existing board layouts.
