MV2N5116UB/TR

Overview

The MV2N5116UB/TR is a P-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes the UB-4 surface mount package and operates with a drain-source breakdown voltage of -600 mV and a gate-source breakdown voltage of 30 V. The device features a gate-source cutoff voltage of 4 V, a zero-gate-voltage drain current of -25 mA, and a maximum power dissipation of 500 mW. It supports an operating temperature range from -65°C to +200°C.

Feature Summary

• Low-profile ceramic surface mount construction in the UB-4 package
• High-temperature operation capability up to 200°C
• Screening available in reference to MIL-PRF-19500 for high-reliability applications

Applications

• High-reliability military electronic systems
• Spacecraft avionics circuits
• Harsh environment signal processing

Procurement Notes

Verify that the specific suffix /TR indicates tape-and-reel packaging if required by automated assembly processes. Confirm that the component meets the necessary environmental screening standards, such as MIL-PRF-19500, for the intended application. Ensure compatibility with the UB-4 footprint during PCB layout. Validate RoHS compliance status for commercial grade versions against project specifications.

Selection Notes

Select this component when a low-profile surface mount JFET with high-temperature tolerance is required. The UB-4 package offers a compact form factor suitable for space-constrained designs. Consider the -600 mV drain-source breakdown voltage for appropriate circuit biasing. Verify that the -25 mA zero-gate-voltage drain current aligns with the system's signal requirements.

Part Context

This part belongs to the 2N5114 through 2N5116 series of P-channel JFETs. The 'MV' prefix typically denotes a military-grade variant or specific screening level within Microchip's portfolio. These devices serve as surface mount equivalents to the JEDEC registered through-hole counterparts, providing similar electrical characteristics in a modern packaging format.

Replacement Considerations

The MX2N5116 serves as a through-hole alternative in the TO-18-3 package. For direct surface mount replacement, verify the 2N5116UB. Ensure any substitute matches the UB-4 package dimensions and maintains the required -600 mV breakdown voltage and -25 mA drain current specifications.