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The MV31026-129A is a GaAs hyperabrupt junction varactor diode designed for high-frequency applications. It features a hermetic microstrip package with a nominal capacitance of 10pF and a minimum breakdown voltage of 22V. The device achieves a quality factor (Q) of 1500 at 4V reverse bias and 50MHz, with a capacitance ratio of 13.1 under C2/C20 conditions. Packaged in a 2-SMD flat lead configuration, it supports surface mount assembly.
Verify the specific ordering suffix against official Microchip Technology documentation to ensure correct variant selection. Confirm that the hermetic microstrip package matches your PCB footprint requirements. Cross-reference datasheet electrical parameters with system design specifications before procurement to guarantee compatibility with operating voltage and frequency ranges.
Select this component when high Q-factor and stable capacitance ratios are required in RF circuits. The GaAs material offers superior performance compared to silicon alternatives in high-frequency regimes. Ensure the 22V breakdown voltage aligns with peak reverse voltage limits in the target application circuit design.
This part belongs to Microchip's discrete semiconductor portfolio, specifically within the varactor diode category. It serves as a critical passive component in microwave and RF integrated circuits, providing variable capacitance control essential for frequency modulation and tuning functions in communication systems.
Consult official Microchip substitution guides for verified equivalents. Generic replacements may not match the hermetic sealing or GaAs hyperabrupt characteristics. Verify pinout compatibility and thermal management requirements if substituting with similar surface-mount varactors.
The nominal capacitance is 10pF.
The minimum breakdown voltage is 22V.