MWI100-12E8

Overview

The IXYS MWI100-12E8 is a six-pack IGBT module utilizing NPT3 technology and HiPerFRED diodes. It features a collector-emitter voltage of 1200 V, a continuous collector current of 165 A at 25°C, and a typical saturation voltage of 2.0 V. The module supports a short-circuit withstand time of 10 µs and operates within a junction temperature range of -40°C to +125°C. It includes an isolated copper base plate for thermal management and screw mounting capabilities.

Feature Summary

• NPT3 IGBTs with low saturation voltage and positive temperature coefficient
• HiPerFRED diodes providing fast reverse recovery and low leakage current
• Industry standard package with solderable pins for PCB mounting

Applications

• AC drives
• Power supplies with power factor correction
• Motor control systems
• Welding equipment

Procurement Notes

Verify component authenticity through authorized channels. Confirm datasheet version compatibility as the product is marked phase-out. Ensure proper handling procedures are followed due to the sensitive semiconductor nature of the module.

Selection Notes

Evaluate thermal resistance requirements against the specified RthJC values. Verify gate drive voltage limits do not exceed ±20 V. Consider short-circuit robustness for circuit protection design. Check physical dimensions for mechanical integration.

Part Context

This module belongs to the MWI series of six-pack IGBT modules from IXYS. It integrates both switching and freewheeling components in a single package. The design targets high-power industrial applications requiring reliable performance under demanding electrical conditions.

Replacement Considerations

Check for direct pin-compatible alternatives from IXYS or other manufacturers. Verify that replacement parts meet or exceed the 1200 V rating and 165 A current capacity. Ensure thermal characteristics match the original design specifications.