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Product Detailed Parameters
- Description：IGBT MODULE 1200V 51A 210W E1
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 35A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：E1
- Supplier Device Package：E1
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：51 A
- Power - Max：210 W
- Current - Collector Cutoff (Max)：300 µA
- Input Capacitance (Cies) @ Vce：2 nF @ 25 V
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Overview
The IXYS MWI50-12E6K is a six-pack IGBT module featuring SPT technology and HiPerFRED diodes. It provides a collector-emitter voltage of 1200 V and a continuous collector current of 51 A at 25°C case temperature. The typical saturation voltage is 2.4 V, with a maximum power dissipation of 250 W. The integrated free-wheeling diodes offer a repetitive reverse voltage of 1600 V and a forward current of 49 A. The package includes an isolated copper base plate, solderable pins for PCB mounting, and a built-in NTC temperature sensor.
Feature Summary
- SPT IGBTs provide low saturation voltage, fast switching, and positive temperature coefficients for easy paralleling.
- HiPerFRED diodes deliver fast reverse recovery, low operating forward voltage, and low leakage current.
- Industry standard E-pack package features an isolated copper base plate and solderable pins for PCB mounting.
Applications
- AC drives
- UPS systems
- Welding equipment
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering code matches the required delivery mode and base quantity. Check for phase-out status as indicated in documentation to ensure long-term availability for production planning.
Selection Notes
Select this module for applications requiring high voltage isolation and robust short-circuit capability. Ensure thermal management design accounts for the specified junction-to-case resistance values. Verify that gate drive voltages remain within the ±20 V DC limit to prevent device damage during operation.
Part Context
This component belongs to the MWI series of six-pack IGBT modules from IXYS. It utilizes SPT (Soft Punch Through) technology for optimized performance in resonant circuits. The module integrates both IGBTs and free-wheeling diodes into a single industry-standard package.
Replacement Considerations
The datasheet indicates this part is phased out. No official substitute part numbers are provided in the source material. Designers should consult IXYS for current equivalent products or perform a full electrical and mechanical compatibility analysis before selecting alternative components.
