MWT-PH31F

Overview

The MWT-PH31F is an 18 GHz medium power AlGaAs/InGaAs pHEMT device featuring a nominal 0.25 micron gate length and 1200 micron gate width. It delivers 30 dBm output power, 13 dB small signal gain, and 44% PAE at 12 GHz. The chip measures 530 x 375 microns with a thickness of 100 microns.

Feature Summary

• Utilizes reliable metal systems and passivation for excellent reliability
• Suitable for wideband or narrow-band applications
• Designed for high-gain and medium power requirements

Applications

• Commercial RF applications
• Military RF applications
• Hi-Rel Space applications

Procurement Notes

Verify the specific package variant (e.g., MwT-PH31F71) required for your assembly process. Confirm that the component meets all absolute maximum rating limits to ensure mean-time-to-failure aligns with design goals. Contact CML Microsystems sales offices in Europe, America, or Asia for current availability and technical support.

Selection Notes

Select this component when designing circuits requiring medium power and high gain up to 18 GHz. The 1200 micron gate width supports higher power levels compared to narrower devices. Ensure thermal management accounts for the specified operating conditions to maintain performance within the defined electrical specifications.

Part Context

This part belongs to the MWT series of microwave transistors manufactured by CML Micro. It utilizes AlGaAs/InGaAs pHEMT technology optimized for frequencies up to 18 GHz. The device is produced using refractory metal/gold gate structures to ensure robustness in demanding environments.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the gate structure of the MWT-PH31F?

It features a 0.25 x 1200 micron Refractory Metal/Gate structure.

Is the MWT-PH31F suitable for narrow-band applications?

Yes, the device is equally effective for either wideband or narrow-band applications.