MWT-PH4F

Overview

The MWT-PH4F is a medium power AlGaAs/InGaAs pHEMT device designed for applications requiring high gain and medium power up to a 28 GHz frequency range. It features a nominal 0.25 micron gate length and an 180 micron gate width, making it suitable for both wideband (e.g., 6 to 18 GHz) and narrow-band operations. At 18 GHz, the device delivers 23 dBm of output power with 14 dB typical small signal gain and 45% typical power added efficiency.

Feature Summary

• Utilizes reliable metal systems and passivation to ensure excellent reliability
• Features a 0.25 x 180 micron refractory metal/gold gate structure
• Designed for high gain and high power added efficiency performance

Applications

• Commercial RF applications
• Military RF systems
• Hi-Rel Space applications

Procurement Notes

Verify the specific packaging suffix required for your assembly process, as the base component is available in 70, 71, and 73 packages. Confirm that the die dimensions of 385 by 260 microns fit your substrate design. Ensure thermal management aligns with the absolute maximum ratings to maintain mean-time-to-failure goals during continuous operation.

Selection Notes

Select this component when designing circuits within the 28 GHz range that require medium power output. The device is equally effective for wideband applications spanning 6 to 18 GHz or for specific narrow-band implementations. Consider the physical chip size and mounting requirements associated with bare die GaAs technology.

Part Context

This part belongs to the MwT series of GaAs pHEMT transistors manufactured by CML Microsystems. These devices are engineered for robust performance in demanding environments, utilizing advanced semiconductor materials to achieve high electron mobility and efficient power conversion at microwave frequencies.

Replacement Considerations

Public confirmed substitute part numbers are not available.