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The MX2N4093 is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology using silicon technology. It is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. At zero gate-source voltage, the drain current is specified at 15 mA, with a continuous drain current rating of -100 pA. The on-resistance is 50 Ohms, and power dissipation is rated at 360 mW. Operating temperatures range from -65 C to +175 C.
Verify component authenticity through authorized Microchip distributors or certified suppliers. Confirm the specific suffix indicates standard bulk packaging. Request official datasheets and material compliance documentation prior to integration. Ensure handling procedures account for the through-hole metal can construction. Validate supply chain integrity to prevent counterfeit components.
Select this component when designing circuits requiring an N-channel JFET capable of operating at elevated temperatures up to 175 C. The TO-18-3 package is appropriate for applications needing hermetic sealing. Compare the 15 mA drain current and 50 Ohm resistance against circuit requirements. Consider thermal management strategies given the 360 mW power dissipation limit in enclosed environments.
This part belongs to the Microchip 2N409x series of N-channel JFETs. Variants within this family typically share similar voltage ratings and package styles but differ in specific current parameters. The MX2N4093 represents a specific binning or specification tier within this broader transistor category, distinguished by its particular drain current and resistance values compared to siblings like the MV2N4093.
Direct substitutes include other Microchip 2N409x series variants such as MV2N4093 or MX2N4092, provided their specific electrical parameters align with the design requirements. Verify pinout compatibility and thermal characteristics before substitution.