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Product Detailed Parameters
- Description：JFET N-CH 40V 3UB
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：8 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：16pF @ 20V
- Resistance - RDS(On)：80 Ohms
- Power - Max：360 mW
- Operating Temperature：-65°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：Military
- Qualification：MIL-PRF-19500/431
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Overview
The MX2N4093UB/TR is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a single configuration with a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical characteristics include a zero-gate-voltage drain-source current of 8 mA, a continuous drain current rating of 100 pA, and a drain-source on-resistance of 80 Ohms. The component supports a power dissipation of 360 mW and operates within a temperature range from -65 C to +175 C.
Feature Summary
- Utilizes silicon-based JFET technology for stable performance
- Designed for through-hole installation in a TO-18-3 metal can package
- Supports extended operating temperatures up to +175 C
Applications
- Low-noise amplifier circuits
- High-impedance input stages
- Precision analog switching applications
Procurement Notes
Verify the specific suffix UB/TR against official Microchip documentation to confirm tape-and-reel packaging requirements. Ensure the ordering part number matches the exact electrical specifications required for the design. Confirm RoHS compliance status directly with the manufacturer as datasheets may vary. Validate that the TO-18-3 package dimensions align with the target PCB layout constraints before finalizing procurement.
Selection Notes
Select this component when a high-drain-source resistance and low leakage current are required for signal conditioning. The wide temperature range makes it suitable for harsh environments where standard silicon devices might fail. Compare the 8 mA IDSS specification against circuit biasing requirements to ensure proper operation without excessive external components.
Part Context
This part belongs to the Microchip JFET family, sharing the TO-18-3 form factor with variants like MV2N4093 and MX2N4092. While these siblings share similar voltage ratings and package types, they differ in specific current parameters such as IDSS and Rds(on). The MX2N4093UB/TR represents a specific binning or packaging option within this broader series.
FAQ
What is the maximum power dissipation for the MX2N4093UB/TR?
The maximum power dissipation is 360 mW.
Does the MX2N4093UB/TR support surface mount technology?
No, it is designed for through-hole mounting in a TO-18-3 package.
What is the gate-source breakdown voltage rating?
The gate-source breakdown voltage is rated at -40 V.
