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The MX2N4856UB is a silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 through-hole package and operates within a temperature range of -65°C to +200°C. The device features a drain-source breakdown voltage of 40V, a gate-source breakdown voltage of -30V, and a maximum power dissipation of 360mW. It supports a continuous drain current of 50mA with an on-resistance of 60 Ohms.
Verify the specific ordering suffix against official Microchip documentation to confirm package type and testing criteria. Confirm RoHS compliance status directly from the datasheet as markings may vary. Ensure the procurement channel provides valid traceability for military-grade or high-reliability variants. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity before purchase.
Select this component when high-temperature stability is required for analog applications. The TO-18-3 package suits through-hole PCB layouts requiring robust mechanical mounting. Compare the 40V breakdown and 360mW dissipation limits against circuit requirements. Consider the 60 Ohm on-resistance for impedance matching needs in low-power signal paths.
This device belongs to the 2N4856 series of N-channel JFETs produced by Microchip Technology. The 'MX' prefix typically denotes a specific manufacturing lot or qualification level within the company's discrete transistor portfolio. These components are designed for demanding environments where standard commercial parts may fail due to thermal stress.
Consult the official datasheet for pin-compatible alternatives such as the 2N4856 or MV2N4856. Verify that substitute devices meet the same 40V breakdown and 200°C operating temperature specifications. Ensure the replacement maintains the TO-18-3 form factor if physical constraints are critical.