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The MX2N4858UB/TR is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a surface-mount SMD-3 package and operates within a temperature range of -65°C to +200°C. Key electrical specifications include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of -30 V, and a continuous drain current of 175 mA. The device exhibits a maximum power dissipation of 1.8 W and an on-resistance of 25 Ohms.
Verify the specific suffix against official Microchip documentation to confirm package type and qualification level. Ensure compatibility with existing PCB footprints for the SMD-3 configuration. Confirm that the component meets all required environmental and military standards for the intended deployment environment before finalizing procurement.
Select this component when a surface-mount JFET with high-temperature capability is required. Compare the 30 V breakdown voltage and 1.8 W power dissipation against circuit requirements. Consider the SMD-3 footprint constraints and verify that the 175 mA current rating aligns with the design's operational limits.
This part belongs to the Microchip high-reliability JFET portfolio, often associated with MIL-PRF-19500 qualifications. It serves as a surface-mount alternative to through-hole variants like the MX2N4858UB, maintaining similar electrical characteristics while adapting to modern assembly processes.
MX2N4858UB