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The MX2N4859 is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18 metal can package with three pins, where the case is electrically connected to the gate terminal. The device operates in depletion mode and is designed for small-signal applications. Key electrical characteristics include a drain-source breakdown voltage of 30V and a gate-source breakdown voltage of -30V. The maximum power dissipation is rated at 360mW, with a maximum drain current of 50mA.
Verify the specific manufacturer source, as historical data indicates production by entities such as TEMIC before acquisition by Microchip. Confirm that the component meets required military or industrial specifications if applicable, as standard commercial variants may differ from qualified versions like the JANTX series. Ensure the TO-18 package compatibility matches the target PCB footprint and thermal requirements.
Select this component when a ruggedized, through-hole JFET with a metal case is required for high-reliability designs. Consider the 30V breakdown rating and 360mW power dissipation limit against circuit demands. Evaluate the need for a gate-connected case versus floating configurations available in other packages. Compare performance against plastic-packaged equivalents if cost or volume constraints necessitate alternative form factors.
This part belongs to the broader family of silicon N-channel JFETs produced by Microchip Technology. It shares functional similarities with related models such as the 2N4858 and MX2N4861UB/TR, though pinouts and specific electrical ratings vary. The TO-18 package is a legacy standard often used in aerospace and defense electronics requiring high thermal stability and mechanical durability.
Public confirmed substitute part numbers are not provided in the available documentation.