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Product Detailed Parameters
- Description：JFET P-CH 30V TO18
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：15 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：6 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：25pF @ 15V
- Resistance - RDS(On)：100 Ohms
- Power - Max：500 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18 (TO-206AA)
- Grade：Military
- Qualification：MIL-PRF-19500
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Overview
The MX2N5115 is a single P-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 through-hole metal can package designed for high-reliability applications. The device operates in depletion mode with a maximum drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. Key electrical characteristics include a gate-source cutoff voltage of 6 V, a zero-bias drain current of 7 mA, and a maximum on-resistance of 100 Ohms. It supports a power dissipation of 500 mW and functions within an extended temperature range from -65°C to +200°C.
Feature Summary
- High-temperature operation capability up to 200°C suitable for demanding environments
- Robust metal TO-18-3 hermetic packaging for enhanced reliability
- Silicon JFET technology providing stable depletion-mode performance
Applications
- Military aerospace electronic systems requiring high reliability
- Harsh environment instrumentation circuits
- High-temperature signal processing applications
Procurement Notes
Verify the specific part marking and datasheet revision against official Microchip documentation before procurement. Ensure the ordering suffix matches the required screening level or commercial grade. Confirm that the TO-18-3 package dimensions align with the target PCB footprint. Validate that the component meets all necessary environmental certifications for the intended deployment scenario.
Selection Notes
Select this component when a P-channel JFET with high thermal stability is required. The TO-18-3 package offers superior heat dissipation compared to plastic packages. Consider the 7 mA zero-bias current for biasing requirements. Verify that the 30 V voltage ratings are sufficient for the circuit's peak operating conditions. Compare against other members of the 2N511x series if different pinouts or parameters are needed.
Part Context
The MX2N5115 belongs to the 2N511x series of P-channel JFETs produced by Microchip Technology. This series includes variants such as the 2N5114, 2N5115, and 2N5116, which share similar electrical characteristics but may differ in specific parameter tolerances or screening levels. The 'MX' prefix typically denotes a specific commercial or military-grade variant within this family, distinguished by its through-hole metal can construction.
Replacement Considerations
- 2N5115
- MQ2N5115
- JANTX2N5115
FAQ
What is the maximum operating temperature for the MX2N5115?
The MX2N5115 supports a maximum operating temperature of +200°C.
Is the MX2N5115 available in a surface-mount package?
No, the MX2N5115 is specified for through-hole installation in a TO-18-3 metal can package.
What is the typical zero-bias drain current for this device?
The zero-bias drain current (Idss) is specified at 7 mA.
