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The MX2N5116UB/TR is a P-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a low-profile surface-mount UB-4 package designed for high-reliability applications. The device features a single-element configuration with a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. Key electrical characteristics include a gate-source cutoff voltage of 4 V, a zero-gate-voltage drain current of 7 mA, and a drain-source on-resistance of 175 Ohms. The component supports a power dissipation of 500 mW and operates within a temperature range extending to +200°C.
Verify the specific suffix against official Microchip documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the ordering part number matches the required screening level, as military equivalents may involve additional qualification standards beyond commercial specifications.
Select this component when a P-channel JFET with a 30 V rating and 175 Ohm on-resistance is required in a surface-mount format. Consider the thermal limits carefully due to the 500 mW power dissipation constraint. Verify that the UB-4 package dimensions align with the target PCB layout constraints.
This device belongs to the 2N5114 through 2N5116 family of small-signal field-effect transistors. The MX2N5116 variant specifically corresponds to the P-channel version of the 2N5116 series, offering a surface-mount alternative to the traditional TO-18 leaded package while maintaining similar electrical performance profiles.
Direct surface-mount equivalents include the MQ2N5116 and 2N5116UB. For through-hole requirements, the MX2N5116 serves as the corresponding leaded package option.