MX2N5116UB/TR

MX2N5116UB/TR

$72.35
  • Description:JFET P-CH 30V UB
  • Series:-

SKU:084265a35795 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET P-CH 30V UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):5 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:27pF @ 15V
  • Resistance - RDS(On):175 Ohms
  • Power - Max:500 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500

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MX2N5116UB/TR

Overview

The MX2N5116UB/TR is a P-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a low-profile surface-mount UB-4 package designed for high-reliability applications. The device features a single-element configuration with a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. Key electrical characteristics include a gate-source cutoff voltage of 4 V, a zero-gate-voltage drain current of 7 mA, and a drain-source on-resistance of 175 Ohms. The component supports a power dissipation of 500 mW and operates within a temperature range extending to +200°C.

Feature Summary

  • Low-profile ceramic surface mount package suitable for space-constrained designs
  • Surface mount equivalent to the JEDEC registered 2N5116 series
  • High maximum operating temperature capability up to +200°C

Applications

  • High-reliability military and aerospace circuits
  • Precision analog signal processing
  • Low-noise amplifier stages

Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the ordering part number matches the required screening level, as military equivalents may involve additional qualification standards beyond commercial specifications.

Selection Notes

Select this component when a P-channel JFET with a 30 V rating and 175 Ohm on-resistance is required in a surface-mount format. Consider the thermal limits carefully due to the 500 mW power dissipation constraint. Verify that the UB-4 package dimensions align with the target PCB layout constraints.

Part Context

This device belongs to the 2N5114 through 2N5116 family of small-signal field-effect transistors. The MX2N5116 variant specifically corresponds to the P-channel version of the 2N5116 series, offering a surface-mount alternative to the traditional TO-18 leaded package while maintaining similar electrical performance profiles.

Replacement Considerations

Direct surface-mount equivalents include the MQ2N5116 and 2N5116UB. For through-hole requirements, the MX2N5116 serves as the corresponding leaded package option.

MX2N5116UB/TRMX2N5116UB/TR
$72.35
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