NC1M120C12WCNG

$31.19

Description：SiC MOS Wafer 12mOhm 1200V
Series：NC1M
Mfr：NovuSem
Package：Tray

SKU:6c46add3c301 Category: Single FETs, MOSFETs Brand: NovuSem

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Product introduction

NC1M120C12WCNG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NovuSem. Its product description is SiC MOS Wafer 12mOhm 1200V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NC1M120C12WCNG

Description：SiC MOS Wafer 12mOhm 1200V
Series：NC1M
Mfr：NovuSem
Package：Tray
FET Type：-
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：214A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for NC1M120C12WCNG

NC1M120C12WCNG

Single FETs, MOSFETs Overview

The NC1M120C12WCNG is a Silicon Carbide (SiC) MOSFET wafer from the NC1M series, manufactured by NovuSem. It features a Drain-Source Voltage (VDS) of 1200V and a continuous drain current (ID) of 214A at 25°C. The device has a typical on-state resistance (RDS(ON)) of 12mΩ. Operating junction temperature ranges from -55°C to +175°C. The die size measures 7.33mm x 6.64mm with a thickness of 175 ± 15 μm. It is supplied in a wafer case.

Single FETs, MOSFETs Feature Summary

Low switching loss for improved efficiency
High blocking voltage combined with low on-resistance
Fast intrinsic diode with low reverse recovery charge
Capable of operating up to 175°C junction temperature

Single FETs, MOSFETs Applications

Photovoltaic inverters
Charging piles
Energy storage systems
Industrial power supplies
Industrial motors

Single FETs, MOSFETs Procurement Notes

Verify the specific NextGen Components part code NC1M120C12WCNG against official datasheets before ordering. Confirm that the wafer form factor aligns with your assembly capabilities. Ensure compliance with RoHS III and REACH requirements. Check for any special parametric codes indicated by the suffix NG. Obtain final confirmation of specifications directly from the manufacturer or authorized distributor.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency applications requiring reduced passive component sizes. Consider the thermal resistance and maximum processing temperature limits during design. Evaluate the gate charge characteristics for driver compatibility. Verify the package type matches the intended mounting process. Assess system cost benefits derived from lower static and dynamic losses.

Single FETs, MOSFETs Part Context

This part belongs to the NC1M series of industrial grade Silicon Carbide MOSFETs produced by NovuSem. The series aims to lower both static and dynamic losses compared to traditional silicon devices. The wafer format allows for custom packaging solutions. It is designed for high power density applications in industrial and energy sectors.

Single FETs, MOSFETs Replacement Considerations

Cross-reference tools may suggest parametrically similar parts. Verify VDS, ID, and RDS(ON) values match exactly. Ensure the replacement supports the required 175°C operating temperature. Confirm the wafer dimensions and metallization are compatible with existing processes.