NC1M120C40HTNG

$21.45

Description：SiC MOSFET N 1200V 40mohm 75A 4
Series：NC1M
Mfr：NovuSem
Package：Tube

SKU:b02d2252199a Category: Single FETs, MOSFETs Brand: NovuSem

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Product introduction

NC1M120C40HTNG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NovuSem. Its product description is SiC MOSFET N 1200V 40mohm 75A 4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NC1M120C40HTNG

Description：SiC MOSFET N 1200V 40mohm 75A 4
Series：NC1M
Mfr：NovuSem
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：40mOhm @ 35A, 20V
Vgs(th) (Max) @ Id：2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2534 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：366W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for NC1M120C40HTNG

NC1M120C40HTNG

Single FETs, MOSFETs Overview

The NC1M120C40HTNG is a Silicon Carbide (SiC) MOSFET from the NovuSem NC1M series, packaged in a TO-247-4L tube. It features an N-channel configuration with a Drain-Source Voltage (VDS) of 1200V and a continuous Drain Current (ID) of 75A at 25°C. The device has a typical Drain-Source On-State Resistance (RDS(ON)) of 40mΩ. Operating junction temperature ranges from -55°C to +175°C. Key electrical parameters include a Gate Threshold Voltage of 2.8V, Total Gate Charge of 166nC, and Reverse Recovery Time of 24ns.

Single FETs, MOSFETs Feature Summary

Low switching loss for improved efficiency
Short-circuit capability exceeding 3 microseconds
High avalanche ruggedness
Fast intrinsic diode with low reverse recovery charge

Single FETs, MOSFETs Applications

PV Inverters
Charging Piles
Energy Storage Systems
Industrial Power Supply
Industrial Motors

Single FETs, MOSFETs Procurement Notes

Verify compliance with RoHS III and REACH directives before procurement. Confirm that the package type matches the required TO-247-4L form factor. Ensure thermal management design accommodates the specified junction temperature range up to 175°C. Check for any specific handling requirements associated with Silicon Carbide components during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency applications requiring reduced passive component size. Consider the 40mΩ on-resistance for conduction loss calculations. Evaluate the short-circuit withstand time for protection circuit design. Compare total gate charge against driver capabilities to optimize switching speed.

Single FETs, MOSFETs Part Context

This part belongs to the NovuSem NC1M series, designed as an industrial-grade Silicon Carbide MOSFET. It aims to lower static and dynamic losses compared to traditional silicon devices. The series supports higher power density by enabling smaller inductors, capacitors, and transformers in power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Cross-reference indicates compatibility with NovuSem/NC1M120C40HT. Verify pinout and thermal characteristics match when substituting. Ensure voltage and current ratings meet or exceed original design specifications.