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NC1M120C75RRNG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NovuSem. Its product description is SiC MOSFET N 1200V 75mohm 46A 7. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NC1M120C75RRNG
- Description：SiC MOSFET N 1200V 75mohm 46A 7
- Series：NC1M
- Mfr：NovuSem
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：75mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id：2.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：+18V, -5V
- Input Capacitance (Ciss) (Max) @ Vds：1402 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：240W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7L
- Package / Case：TO-263-8, DPak (7 Leads + Tab)
Single FETs, MOSFETs datasheet and documents for NC1M120C75RRNG
Single FETs, MOSFETs Overview
The NC1M120C75RRNG is a Silicon Carbide (SiC) MOSFET from the NovuSem NC1M series, packaged in a TO-263-7L case. It features an N-channel configuration with a Drain-Source Voltage (VDS) of 1200V and a continuous drain current (ID) of 47A at 25°C. The device has a typical Drain-Source On-State Resistance (RDS(ON)) of 75 mΩ. Operating junction temperature ranges from -55°C to +175°C. The component is supplied in Tape & Reel packaging and complies with RoHS/RoHS III standards.
Single FETs, MOSFETs Feature Summary
- Low switching loss for improved efficiency
- Short-circuit capability exceeding 3 microseconds
- High avalanche ruggedness
- Fast intrinsic diode with low reverse recovery charge
Single FETs, MOSFETs Applications
- Photovoltaic inverters
- Charging piles
- Energy storage systems
- Industrial power supplies
- Industrial motors
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against the manufacturer's latest specification sheet before finalizing procurement. Confirm that the package type matches the required TO-263-7L footprint and that the supplier provides valid RoHS compliance documentation. Ensure the part number suffix aligns with the intended reel quantity and handling requirements.
Single FETs, MOSFETs Selection Notes
Select this component for high-frequency applications requiring reduced system size due to fast switching speeds. Evaluate thermal management capabilities based on the specified thermal resistance from junction to case. Consider the short-circuit withstand time when designing protection circuits for industrial motor drives or energy storage converters.
Single FETs, MOSFETs Part Context
This device belongs to the NC1M series of industrial-grade Silicon Carbide MOSFETs manufactured by NovuSem. The series is designed to lower both static and dynamic losses compared to traditional silicon devices. The TO-263-7L package facilitates efficient heat dissipation through the tab connection.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with original manufacturer part numbers such as NC1M120C75RR to ensure compatibility. Verify pinout configurations and electrical characteristics match the existing design requirements before substitution.
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