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The NCV1413BDR2 is a high-voltage, high-current Darlington transistor array manufactured by onsemi. It integrates seven independent NPN Darlington pairs within a single 16-pin SOIC surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 500 mA per channel. It features a minimum DC current gain (hFE) of 1000 at 350 mA with a 2 V collector-emitter voltage. The component operates across an extended temperature range from -40°C to +125°C and meets AEC-Q100 automotive qualification standards.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure the procurement source provides valid traceability records for automotive-grade components. Confirm RoHS compliance status matches the latest product change notifications before finalizing orders.
Select this component when multiple isolated high-side switching channels are required in a compact footprint. Compare thermal resistance values against the target PCB copper area to ensure junction temperatures remain within limits during continuous operation. Verify input logic levels match the driving circuit capabilities to guarantee proper saturation.
This part belongs to the MC1413/NCV1413 family of high-voltage Darlington arrays. The NCV prefix indicates automotive-grade qualification, distinguishing it from standard commercial variants like the MC1413. The DR2 suffix specifies the 16-lead SOIC surface-mount package configuration used for modern PCB assembly.
Direct pin-compatible substitutes include the MC1413BDR2G and ULN2003A series devices. Verify that alternative parts meet the same 50 V collector-emitter voltage and 500 mA current requirements. Check if the replacement offers equivalent current gain characteristics for identical drive performance.