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The NCV1413BDR2G is an automotive-grade, high-voltage, high-current NPN Darlington transistor array manufactured by onsemi. It integrates seven independent NPN Darlington pairs within a single 16-pin SOIC package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous DC collector current (Ic) of 500 mA per channel. It features a minimum DC current gain (hFE) of 1000 at 350 mA with a 2 V collector-emitter voltage. The component operates reliably across an extended temperature range from -40°C to +125°C and meets AEC-Q100 qualification standards for automotive applications.
Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging configuration. Confirm that the AEC-Q100 automotive qualification status aligns with project requirements. Check for any recent Product Change Notifications (PCN) regarding package dimensions or manufacturing site changes before finalizing procurement specifications.
Select this component when multiple independent high-gain switching channels are required in a limited board space. Ensure the design accounts for the thermal dissipation capabilities of the 16-SOIC package under maximum load conditions. Verify that the 50 V voltage rating provides sufficient headroom for the intended supply voltage and transient spikes.
This part belongs to the NCV1413 series, which is the automotive-qualified variant of the MC1413 family. The series is designed for robust performance in harsh electrical environments typical of vehicle electronics. The 'B' designation indicates specific electrical characteristics optimized for high-current driving tasks compared to standard commercial equivalents.
The MC1413BDR2G serves as the commercial equivalent. For pin-compatible replacements, verify that substitute parts meet the same AEC-Q100 reliability standards and maintain identical 50 V / 500 mA ratings. Cross-reference datasheets to confirm matching saturation voltages and current gain specifications.