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NDD02N40-1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 400V 1.7A IPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NDD02N40-1G
- Description：MOSFET N-CH 400V 1.7A IPAK
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.5Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：121 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for NDD02N40-1G
Single FETs, MOSFETs Overview
The NDD02N40-1G is a 400 V, N-channel power MOSFET manufactured by onsemi in an IPAK (CASE 369D) package. It features a maximum drain-to-source voltage of 400 V and a continuous drain current of 0.4 A at 25°C case temperature. The device has a static drain-to-source on-resistance of 5.5 Ω at 10 V gate drive. Key electrical parameters include a gate threshold voltage of 1.6 V typical, total gate charge of 5.5 nC, and single-pulse avalanche energy rating of 120 mJ. Thermal resistance from junction to case is 3.2 °C/W.
Single FETs, MOSFETs Feature Summary
- 100% avalanche tested for ruggedness
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant
Single FETs, MOSFETs Applications
Single FETs, MOSFETs Procurement Notes
Verify the ordering suffix -1G corresponds to the IPAK (CASE 369D) straight lead package configuration as specified in the datasheet. Confirm that the component meets Pb-Free, Halogen Free, and BFR Free requirements along with RoHS compliance standards before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a 400 V breakdown voltage and low continuous current handling around 0.4 A. Consider the 5.5 Ω on-resistance and thermal characteristics when designing heat dissipation strategies. Ensure the IPAK package style fits the mechanical constraints of the target circuit board layout.
Single FETs, MOSFETs Part Context
This part belongs to the NDD02N40/NDT02N40 family of N-channel power MOSFETs from onsemi. The family includes variants in DPAK and SOT-223 packages, but the NDD02N40-1G specifically utilizes the IPAK through-hole package. These devices are designed for general-purpose switching applications within their rated voltage and current limits.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes within the same family include the NDT02N40T1G (SOT-223) and NDD02N40T4G (DPAK), though package differences must be accounted for. Cross-package replacements require verifying pinout compatibility and thermal performance adjustments.
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