NDH8502P

FET, MOSFET Arrays Overview

The NDH8502P is a dual P-channel enhancement mode field effect transistor manufactured by Fairchild Semiconductor. It features a SuperSOT-8 package with copper leads for efficient thermal performance. The device supports a drain-to-source voltage of 30V and continuous drain current of 2.2A at 25°C. On-resistance is specified as 0.18 Ω at VGS = -4.5 V and 0.11 Ω at VGS = -10 V.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration in a compact SuperSOT-8 package
• Low on-resistance optimized for fast switching applications
• Copper lead frame design for improved thermal dissipation

FET, MOSFET Arrays Applications

• Notebook computer power management
• Battery powered circuits
• Low voltage load switching

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin, as the component is associated with both Fairchild Semiconductor and onsemi due to corporate acquisitions. Confirm the specific datasheet version matches the required electrical characteristics. Ensure the package type corresponds to the SuperSOT-8 designation to avoid pinout mismatches during integration.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage DC-DC converter designs requiring dual P-channel control. The 30V rating suits single-cell lithium battery systems. Evaluate thermal requirements based on the 2.2A continuous current limit and the package's heat dissipation capabilities under high-duty cycle operations.

FET, MOSFET Arrays Part Context

This part belongs to the family of dual MOSFET arrays designed for portable electronics. It replaces older discrete P-channel solutions by integrating two transistors into a single footprint, reducing board space and parasitic inductance in power management circuits.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes within the Fairchild or onsemi portfolios that maintain the 30V/2.2A specification and SuperSOT-8 package dimensions. Verify pin compatibility before substitution.