NDP7050L

$2.08

Description：MOSFET N-CH 50V 75A TO220-3
Series：-
Mfr：Fairchild Semiconductor
Package：Tube

SKU:e288b08824d9 Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

NDP7050L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 50V 75A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NDP7050L

Description：MOSFET N-CH 50V 75A TO220-3
Series：-
Mfr：Fairchild Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：15mOhm @ 37.5A, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：115 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：-65°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for NDP7050L

NDP7050L

Single FETs, MOSFETs Overview

The NDP7050L is an N-Channel enhancement mode power field effect transistor manufactured by Fairchild Semiconductor. It utilizes high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. The device is designed to withstand high energy pulses in avalanche and commutation modes. Key electrical parameters include a drain-source voltage of 50V, a continuous drain current of 75A at case temperature, and a maximum gate-source voltage of ±20V. It features a maximum on-resistance of 13 milliohms at 40A and 10V, with a maximum gate charge of 115nC at 10V. The component operates within a junction temperature range of -65°C to 175°C.

Single FETs, MOSFETs Feature Summary

High cell density DMOS technology minimizes on-state resistance for efficient power handling.
Designed to withstand high energy pulses in avalanche and commutation modes.
Optimized for fast switching performance and low in-line power loss.

Single FETs, MOSFETs Applications

Automotive applications
DC/DC converters
PWM motor controls
Battery powered circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against official datasheets, as standard documentation typically lists the NDP7050 without this suffix. Confirm package type and manufacturer origin, as Fairchild assets were acquired by ON Semiconductor. Ensure the component matches the TO-220AB physical dimensions and pinout described in the original Fairchild specifications.

Single FETs, MOSFETs Selection Notes

Select this component for low voltage applications requiring robust transient resistance and fast switching. Consider the thermal management requirements associated with the TO-220 package and the 150W power dissipation rating. Evaluate the gate charge characteristics for driving efficiency in PWM control circuits.

Single FETs, MOSFETs Part Context

This part belongs to the family of N-Channel enhancement mode power FETs produced using proprietary DMOS processes. These devices are engineered for general-purpose power switching where low conduction losses and high reliability under transient conditions are critical design factors.