NDS8858H

FET, MOSFET Arrays Overview

The NDS8858H is a complementary MOSFET half-bridge device manufactured using high cell density DMOS technology. It integrates an N-channel and P-channel MOSFET in a single 8-SOIC package. The N-channel unit provides a drain-source voltage of 30V, continuous current of 6.3A, and on-resistance of 0.035Ω at VGS=10V. The P-channel unit offers -30V breakdown, -4.8A continuous current, and 0.065Ω on-resistance at VGS=-10V. Both channels feature matched input capacitance for synchronized switching.

FET, MOSFET Arrays Feature Summary

• Complementary half-bridge configuration with matched pair characteristics
• High-density DMOS process for minimized on-state resistance
• Optimized for low voltage half-bridge and CMOS applications

FET, MOSFET Arrays Applications

• Low voltage half-bridge power circuits
• CMOS logic interface applications requiring paired gates
• General purpose switching modules

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status as the product may be obsolete. Ensure proper ESD handling protocols are followed during storage and assembly due to the sensitivity of MOSFET gate structures.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring matched N/P channel performance in a compact surface mount footprint. Evaluate thermal dissipation requirements based on copper pad area, as steady-state power capability varies significantly with board layout dimensions.

FET, MOSFET Arrays Part Context

Originally produced by Fairchild Semiconductor, this part belongs to the complementary MOSFET family designed for integrated switching solutions. The NDS8858H serves as a legacy alternative for designs previously utilizing discrete matched pairs, consolidating two devices into one SO-8 package.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives from current manufacturers. Verify that replacement parts maintain similar on-resistance values and gate charge specifications to ensure circuit timing compatibility.