NDS8934

FET, MOSFET Arrays Overview

The NDS8934 is a dual P-Channel Enhancement Mode Field Effect Transistor manufactured by Fairchild Semiconductor. It features a -20 V drain-source voltage rating and a continuous drain current of -3.8 A. The device utilizes high cell density DMOS technology to achieve an on-state resistance (RDS(ON)) of 0.07 Ω at VGS = -4.5 V and 0.1 Ω at VGS = -2.7 V. Packaged in an SOIC-8 surface mount configuration, it supports junction temperatures up to 150 °C and includes thermal characteristics such as a junction-to-ambient resistance of 78 °C/W.

FET, MOSFET Arrays Feature Summary

• Dual MOSFET integration within a single surface mount package for space-efficient designs.
• High-density cell design optimized for extremely low on-state resistance.
• Enhanced switching performance suitable for fast commutation modes.

FET, MOSFET Arrays Applications

• Notebook computer power management systems
• Battery-powered circuits requiring low inline power loss
• Low voltage DC-DC converter applications

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific revision or lot date code aligns with your supply chain requirements. Ensure the datasheet version matches the physical marking on the device to avoid discrepancies in electrical parameters during integration.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-Channel solution is required for low-voltage environments. Evaluate the thermal resistance constraints based on the copper pad area available on the PCB layout. Consider the gate threshold voltage variations across temperature ranges to ensure reliable switching under varying load conditions.

FET, MOSFET Arrays Part Context

This device belongs to the family of dual enhancement mode field effect transistors designed for high-density power applications. It represents a legacy product line from Fairchild Semiconductor, now maintained within the onsemi portfolio. The part is characterized by its robust construction using proprietary DMOS technology tailored for efficiency and transient withstand capability.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the current onsemi catalog that match the -20V / -3.8A specifications. Verify if updated packages or improved thermal ratings are available in newer generations of dual P-Channel MOSFETs.