NDS8936

FET, MOSFET Arrays Overview

The NDS8936 is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It features a maximum drain-source voltage of 30 V and continuous drain current of ±5.3 A. The device exhibits an on-resistance of 0.035 Ω at VGS = 10 V and 0.05 Ω at VGS = 4.5 V. Operating temperature ranges from -55°C to +150°C, with power dissipation rated at 2 W for dual operation and up to 1.6 W for single operation.

FET, MOSFET Arrays Feature Summary

• High density cell design for extremely low RDS(ON).
• Dual MOSFET in surface mount package.
• High power and current handling capability.

FET, MOSFET Arrays Applications

• Notebook computer power management
• Battery powered circuits

FET, MOSFET Arrays Procurement Notes

Verify the component status as obsolete before procurement planning. Confirm that the datasheet originates from Fairchild Semiconductor, which was acquired by onsemi. Ensure compatibility with legacy designs requiring this specific dual N-channel configuration.

FET, MOSFET Arrays Selection Notes

Select based on required switching speed and thermal constraints. Evaluate junction-to-ambient thermal resistance against PCB copper pad area. Consider gate threshold voltage variations across temperature ranges for logic compatibility.

FET, MOSFET Arrays Part Context

This component belongs to the family of dual N-channel enhancement mode field effect transistors produced using high cell density DMOS technology. It is designed for applications needing fast switching and low in-line power loss in low voltage environments.

FET, MOSFET Arrays Replacement Considerations

Check for equivalent dual N-channel MOSFETs with matching 30V rating and SO-8 package. Verify pinout compatibility and thermal characteristics when substituting.