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NDS8947 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 4A 8SOIC. Review the specifications below when checking this part for your BOM.
The NDS8947 is a dual P-Channel Enhancement Mode Field Effect Transistor manufactured by onsemi. It features a -30 V Drain-Source Voltage (VDSS) and a continuous Drain Current (ID) of -4 A. The device exhibits an On-State Drain-Source Resistance (RDS(ON)) of 0.065 Ω at VGS = -10 V and ID = -4.0 A, or 0.1 Ω at VGS = -4.5 V and ID = -3.3 A. Operating within a temperature range of -55°C to 150°C, it utilizes high-density DMOS technology for low on-state resistance and superior switching performance.
Verify the component manufacturer, as the datasheet indicates Fairchild Semiconductor origin. Confirm the specific package type matches the required PCB footprint. Ensure the operating conditions align with the absolute maximum ratings provided in the official documentation before integration into the final design.
Select this component for applications requiring dual P-Channel FETs in a compact surface mount form factor. Evaluate thermal requirements based on the specified junction-to-ambient resistance values. Consider the gate threshold voltage characteristics when designing drive circuits for varying load conditions.
This component belongs to the family of dual enhancement mode field effect transistors designed for general-purpose switching applications. It is characterized by its ability to handle moderate currents while maintaining low conduction losses in space-constrained environments.
Check for equivalent dual P-Channel MOSFETs with matching VDSS and ID ratings. Verify that alternative components offer comparable RDS(ON) values and compatible pin configurations to ensure seamless integration without redesigning the host circuit board.
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