NDS9925A

FET, MOSFET Arrays Overview

The onsemi NDS9925A is a dual N-channel enhancement mode field effect transistor housed in an SO-8 surface mount package. It utilizes high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. The device features a drain-source voltage of 20 V, continuous drain current of 4.5 A, and static drain-source on-resistance of 0.06 Ω at VGS = 4.5 V. Operating temperature ranges from -55°C to 150°C with junction-to-ambient thermal resistance of 78 °C/W.

FET, MOSFET Arrays Feature Summary

• Dual MOSFET configuration integrated into a widely used surface mount package for compact designs.
• High density cell design engineered for extremely low RDS(ON) and fast switching capabilities.
• Optimized for low voltage applications requiring minimal inline power loss and transient resistance.

FET, MOSFET Arrays Applications

• Notebook computer power management systems
• Battery powered circuits
• Low voltage general usage applications

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix matches the required packaging option, such as tape and reel quantities or standard bulk configurations, to ensure compatibility with automated assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel logic level switching within a small footprint. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance. Evaluate the thermal dissipation constraints against the specified junction-to-ambient resistance values for the intended PCB copper pad area.

FET, MOSFET Arrays Part Context

This part belongs to the family of N-channel enhancement mode power field effect transistors manufactured using proprietary high cell density DMOS technology. It is designed specifically for applications where minimizing on-state resistance and maximizing switching speed are critical within low voltage operational environments.

FET, MOSFET Arrays Replacement Considerations

NDS9925AS62Z

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the NDS9925A?

The maximum continuous drain current is 4.5 A.

Does the NDS9925A contain one or two transistors?

It contains two independent N-channel enhancement mode transistors in a single package.

What is the typical gate threshold voltage range?

The gate threshold voltage typically ranges from 0.4 V to 1 V under standard test conditions.