NDS9948

FET, MOSFET Arrays Overview

The NDS9948 is a dual P-Channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in an SOIC-8 package. It features a -60 V drain-source voltage rating and supports continuous drain currents of -2.3 A at 25°C. The device exhibits low on-resistance values of 250 mΩ at VGS = -10 V and 500 mΩ at VGS = -4.5 V. With a typical gate charge of 9 nC, it enables fast switching speeds suitable for power management applications. Thermal resistance to ambient ranges from 78°C/W to 135°C/W depending on copper pad size, and the junction temperature range spans from -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration optimized for wide gate drive voltage ratings between 4.5 V and 20 V
• Advanced PowerTrench trench technology providing extremely low RDS(on) and high current handling capability
• Low gate charge and fast switching speed characteristics designed for efficient power management

FET, MOSFET Arrays Applications

• Power management circuits
• Load switching applications
• Battery protection systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking the marking diagram against the physical device. Confirm the package type matches the specified SOIC-8 outline. Ensure the ordering suffix corresponds to the required tape and reel shipping format. Validate that the device meets Pb-Free and Halide Free requirements as stated in the datasheet specifications.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring dual isolated P-channel switches with a -60 V breakdown voltage. Consider the thermal resistance limits based on the specific PCB copper pad area intended for mounting. Verify that the gate drive voltage falls within the 4.5 V to 20 V operational range to ensure optimal RDS(on) performance and switching efficiency.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's PowerTrench family of MOSFETs, which utilizes advanced trench technology to minimize on-resistance. The NDS9948 specifically serves as a rugged gate version designed for robust operation in various power management environments. It represents a standard discrete solution for compact load switching and battery protection tasks.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other dual P-channel MOSFETs offering similar -60 V ratings and SOIC-8 packaging. Ensure substitute parts match or exceed the required -2.3 A continuous current and thermal dissipation capabilities. Verify pinout compatibility and electrical characteristics such as gate threshold voltage and total gate charge.