NDS9953A

FET, MOSFET Arrays Overview

The NDS9953A is a dual P-Channel Enhancement Mode Field Effect Transistor manufactured by onsemi. It features a -30 V Drain-Source Voltage (VDSS) and supports continuous Drain Currents of ±2.9 A. The device achieves an extremely low static Drain-Source On-Resistance (RDS(ON)) of 0.13 Ω at VGS = -10 V and ID = -1.0 A. Utilizing high-density DMOS technology, it offers superior switching performance and withstands high energy pulses in avalanche modes. The component operates within a temperature range of -55°C to 150°C and is housed in a surface mount package suitable for low voltage applications.

FET, MOSFET Arrays Feature Summary

• Dual MOSFET configuration in a widely used surface mount package
• High power and current handling capability
• Extremely low RDS(ON) due to high density cell design
• Suitable for fast switching and transient resistance requirements

FET, MOSFET Arrays Applications

• Notebook computer power management
• Battery powered circuits
• Low voltage applications requiring fast switching

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as the datasheet indicates Fairchild Semiconductor production while the brand is listed as onsemi. Confirm the specific package type matches the required board layout dimensions. Ensure the operating conditions remain within the specified thermal resistance limits for the chosen copper pad area.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual P-Channel switching with low on-resistance. Evaluate the thermal dissipation requirements based on the steady-state power dissipation curves relative to the available copper mounting pad area. Consider the gate threshold voltage variations across the operating temperature range when designing the drive circuitry.

FET, MOSFET Arrays Part Context

This component belongs to the family of dual enhancement mode field effect transistors designed for surface mount applications. It utilizes proprietary high cell density DMOS technology to minimize on-state resistance and improve switching speed compared to standard discrete solutions.

FET, MOSFET Arrays Replacement Considerations

Check for direct equivalents from Fairchild or onsemi offering identical pinouts and electrical characteristics. Verify that any substitute maintains the same SuperSOT-8 package dimensions and thermal properties.