NDS9956A

$1.21

Description：MOSFET 2N-CH 30V 3.7A 8SOIC
Series：-

SKU:22653195bf40 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

NDS9956A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 3.7A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NDS9956A

Description：MOSFET 2N-CH 30V 3.7A 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.7A
Rds On (Max) @ Id, Vgs：80mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：320pF @ 10V
Power - Max：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for NDS9956A

NDS9956A

FET, MOSFET Arrays Overview

The NDS9956A is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It features a drain-source voltage of 30 V and a continuous drain current of ±3.7 A. The device utilizes high cell density DMOS technology to achieve an extremely low on-state resistance, specified as 0.08 Ω at VGS = 10 V and ID = 2.2 A. Designed for surface mount applications, it offers superior switching performance and withstands high energy pulses in avalanche and commutation modes.

FET, MOSFET Arrays Feature Summary

Dual MOSFET configuration integrated into a single surface mount package
High density cell design engineered for extremely low on-resistance
Capable of handling high power and current within a widely used footprint

FET, MOSFET Arrays Applications

DC/DC conversion circuits
DC motor control systems

FET, MOSFET Arrays Procurement Notes

Verify the component status carefully before procurement. The datasheet identifies this part as obsolete from Fairchild Semiconductor. Confirm availability through authorized distributors or secondary market suppliers. Ensure the received units match the original specifications and packaging requirements for your specific circuit design needs.

FET, MOSFET Arrays Selection Notes

Select this component for low voltage applications requiring fast switching and low in-line power loss. The dual configuration simplifies board layout for half-bridge or synchronous rectifier topologies. Evaluate thermal management based on the junction-to-ambient resistance values provided in the datasheet for your specific copper pad area.

FET, MOSFET Arrays Part Context

This component belongs to the family of dual N-channel enhancement mode field effect transistors produced using proprietary high cell density DMOS technology. It shares functional similarities with other devices like the NDS9958 but differs in specific electrical ratings and package configurations suitable for various low voltage power management tasks.