NDS9957

FET, MOSFET Arrays Overview

The NDS9957 is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It features a drain-source voltage rating of 60 V and a continuous drain current of ±2.6 A. The device exhibits an on-state resistance (RDS(ON)) of 0.16 Ω at VGS = 10 V and 2.6 A, with a maximum gate-source voltage of ±20 V. Power dissipation capabilities vary based on operation mode, reaching up to 2 W for dual operation. Thermal resistance from junction to ambient is 78 °C/W under standard mounting conditions.

FET, MOSFET Arrays Feature Summary

• Dual MOSFET configuration in a surface mount package
• High density cell design for extremely low RDS(ON)
• Superior switching performance and high energy pulse withstand capability

FET, MOSFET Arrays Applications

• DC motor control
• DC/DC conversion

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix matches the required packaging option, such as tape and reel quantities or rail/tube formats, to ensure compatibility with automated assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for low voltage applications requiring fast switching and low inline power loss. Ensure the thermal management design accounts for the specified junction-to-ambient thermal resistance values corresponding to the chosen copper pad area and operating environment.

FET, MOSFET Arrays Part Context

This part belongs to the family of dual N-channel enhancement mode power field effect transistors. It utilizes proprietary high cell density DMOS technology tailored to minimize on-state resistance while providing robust handling of avalanche and commutation modes.

FET, MOSFET Arrays Replacement Considerations

NDS9953A

FET, MOSFET Arrays FAQ

What is the typical input capacitance of the NDS9957?

The typical input capacitance (Ciss) is 200 pF when measured at VDS = 30 V, VGS = 0 V, and f = 1.0 MHz.

How does the on-resistance change at elevated temperatures?

At TA = 125°C, the maximum RDS(ON) increases to 0.3 Ω at VGS = 10 V and ID = 2.6 A, compared to the 0.16 Ω typical value at 25°C.