NDSH40120CDN

Overview

The NDSH40120CDN is a Silicon Carbide (SiC) Schottky Diode from onsemi's EliteSiC series, housed in a TO-247-3LD package. It features dual anodes with a common cathode configuration. Key electrical parameters include a peak repetitive reverse voltage of 1200 V and a continuous rectified forward current of 52 A per device at case temperatures below 135°C. The typical forward voltage is 1.36 V at 20 A and 25°C. It supports a maximum junction temperature of 175°C and offers a single pulse avalanche energy rating of 166 mJ.

Feature Summary

• Avalanche rated for robust operation under transient conditions
• Positive temperature coefficient facilitates ease of paralleling
• No reverse recovery or forward recovery characteristics

Applications

• Switch Mode Power Supplies (SMPS)
• Solar Inverters
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific ordering suffix to confirm the shipping format. The standard NDSH40120CDN designation corresponds to a tube containing 30 units. Confirm that the procurement channel provides official documentation matching the datasheet revision date to ensure component authenticity and traceability.

Selection Notes

Select this component for high-frequency power switching applications requiring superior thermal performance compared to silicon alternatives. Ensure the design accommodates the 175°C maximum junction temperature limit and utilizes appropriate heatsinking to maintain case temperatures within the specified derating curves for optimal current handling.

Part Context

This device belongs to onsemi's EliteSiC generation of wide-bandgap semiconductors. It is designed to replace traditional silicon fast-recovery diodes in high-efficiency systems. The TO-247-3LD mechanical outline provides standardized mounting dimensions suitable for industrial power electronics assemblies.

Replacement Considerations

Direct replacement requires verifying pinout compatibility and thermal resistance values. Check if alternative manufacturers offer equivalent 1200V SiC Schottky diodes in the TO-247-3LD package with comparable avalanche ratings and forward voltage specifications.

FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 123 A for a half-sine pulse duration of 8.3 ms.

Does this diode exhibit reverse recovery charge?

No, the device features no reverse recovery current due to its Schottky barrier structure.

What is the thermal resistance from junction to case?

The maximum thermal resistance from junction to case is 0.69 °C/W per leg and 0.39 °C/W per device.