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The NE202930-A is an NPN bipolar RF transistor manufactured by CEL, designed for high-frequency applications up to 11 GHz. It operates with a maximum collector-emitter voltage of 6V and a test current of 10 mA. The device features a low noise figure of 1.1 dB and is housed in a surface-mount 3-SuperMiniMold package. With a power dissipation rating of 150 mW, it supports efficient signal amplification in compact wireless systems.
Verify the specific manufacturer source, as the component may be listed as obsolete or discontinued in certain catalogs. Confirm package integrity and authenticity through authorized distributors. Check for alternative part numbers if new production units are unavailable. Ensure compliance with RoHS standards if required for your application. Validate datasheet revisions before integration.
Select this component for applications requiring high-speed RF performance in a small form factor. Consider the 6V voltage limit and 150 mW power dissipation when designing thermal management solutions. Evaluate the 1.1 dB noise figure against system sensitivity requirements. Ensure the SuperMiniMold package fits within the PCB layout constraints.
This transistor belongs to the NE2 series from CEL, a line of discrete semiconductors focused on radio frequency performance. The series typically includes various NPN and PNP configurations optimized for different frequency bands and power levels. The NE202930-A specifically targets the upper end of the UHF and lower SHF ranges.
Check for direct substitutes within the CEL NE2 series that match the 11 GHz frequency and 3-SuperMiniMold package. Verify pinout compatibility and electrical parameters such as Vceo and Ptot before substitution. Consult official replacement guides for discontinued components.