NE34018-64-A

Overview

The NE34018 is a GaAs Hetero-Junction FET in an SOT-343 package, designed for low noise amplification from 1 to 3 GHz. At VDS=2V and IDS=5mA (2 GHz), it achieves a typical Noise Figure of 0.6 dB and Associated Gain of 16.0 dB. Output P1dB reaches 16.5 dBm at VDS=3V/IDS=30mA. Maximum ratings include VDS of 4V, VGSO/VGDO of -3V, TCH of 125°C, and PT of 150 mW.

Feature Summary

• Utilizes ion implantation fabrication for improved RF performance and uniformity
• Housed in a miniature plastic surface mount package for compact integration
• Optimized for high gain and ultra-low noise figure in the L-band range

Applications

• GPS receiver front ends
• PCS communication systems
• WLAN infrastructure components
• MMDS applications

Procurement Notes

Verify the specific IDSS binning suffix (e.g., -TI-63 or -TI-64) against design requirements, as drain current ranges vary significantly between bulk and tape/reel options. Confirm the manufacturer origin, noting that CEL acts as the exclusive North American agent for NEC products. Ensure the datasheet version matches the production lot specifications.

Selection Notes

Select based on required noise figure versus gain trade-offs at specific bias points. The device supports multiple bias configurations, allowing designers to optimize linearity or sensitivity. Verify thermal management capabilities, as total power dissipation is limited to 150 mW with a channel-to-ambient resistance of 833 °C/W.

Part Context

This component is a Gallium Arsenide Hetero-Junction Field-Effect Transistor manufactured by California Eastern Laboratories (CEL). It serves as a specialized active element for radio frequency signal processing, specifically targeting low-noise amplification tasks within microwave and wireless communication circuit architectures.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.