NE3511S02-A

Overview

The NE3511S02-A is a discontinued N-channel Heterojunction Field-Effect Transistor (HJ-FET) designed for X to Ku-band super low noise amplifier applications. It operates within a drain-to-source voltage range of 1 V to 3 V and a drain current range of 5 mA to 20 mA. At a frequency of 12 GHz, the device typically achieves a noise figure of 0.30 dB and an associated gain of 13.5 dB. The component utilizes a Micro-X plastic S02 package.

Feature Summary

• Super low noise figure and high associated gain
• Micro-X plastic (S02) package

Applications

• X to Ku-band DBS LNB
• Other X to Ku-band communication systems

Procurement Notes

Verify that the specific part number matches the exact suffix required for your design, as ordering suffixes indicate variations in packaging or lead-free status. Confirm availability through authorized distributors, noting that this component is officially discontinued by the manufacturer. Ensure compliance with RoHS directives if environmental standards are required for the final assembly.

Selection Notes

Select this component for designs requiring minimal signal degradation in the X to Ku-band spectrum. Evaluate the trade-off between the low noise figure and the associated gain at the target operating frequency. Consider the physical dimensions of the S02 package for PCB layout constraints and ensure the biasing circuitry supports the recommended operating conditions specified in the datasheet.

Part Context

This device belongs to the NE3511 series of N-channel HJ-FETs manufactured by CEL. It is specifically engineered for microwave frequencies, providing superior noise performance compared to standard transistors. The product line has been succeeded by newer generations, but this model remains a reference for legacy X to Ku-band system designs.

Replacement Considerations

The CE3512K2 is listed as a drop-in replacement for the NE3511S02.