NE3511S02-T1C-A

Overview

The NE3511S02-T1C-A is an N-channel Heterojunction Field-Effect Transistor (HJ-FET) designed for X to Ku-band super low noise amplifier applications. Manufactured by California Eastern Labs, this component utilizes a Micro-X plastic S02 package. It operates as a single-element device optimized for high-frequency performance in satellite communication systems.

Feature Summary

• Super low noise figure and high associated gain characteristics
• N-channel heterojunction field-effect transistor technology
• Micro-X plastic S02 surface-mount package

Applications

• X to Ku-band DBS LNB
• Other X to Ku-band communication systems

Procurement Notes

Verify the specific suffix 'T1C-A' against official California Eastern Labs documentation, as datasheets frequently reference 'T1D-A'. Confirm current production status and availability directly with the manufacturer or authorized distributors, as end-of-life notices may apply to this family of components.

Selection Notes

Select this component for designs requiring ultra-low noise performance in the X and Ku frequency bands. Ensure the circuit layout accommodates the Micro-X S02 package dimensions. Verify biasing requirements align with the specific electrical parameters provided in the official datasheet for this exact suffix variant.

Part Context

This part belongs to the NE3511 series of RF JFET transistors from California Eastern Labs. The series includes variants such as NE3511S02-T1D-A, which share similar functional descriptions for X to Ku-band amplification. The product line focuses on pseudomorphic HEMT technology for satellite downlink applications.

Replacement Considerations

Official substitute part numbers are not confirmed in the provided source material. Cross-reference with other CEL NE3511 series variants only if electrical parameters match exactly. Consult manufacturer documentation for approved pin-compatible alternatives.